Transphorm, Inc. (https://www.transphormusa.com/en/) (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced the SuperGaN® TOLT FET. With an on-resistance of 72 milliohms, the TP65H070G4RS (https://cts.businesswire.com/ct/CT?id=smartlink&url=https%3A%2F%2Fwww.transphormusa.com%2Fen%2Fdocument%2Fdatasheet-tp65h070g4rs%2F&esheet=53693144&newsitemid=20231026675184&lan=en-US&anchor=TP65H070G4RS&index=2&md5=1eb541cc865b1c6a53c…